Review of

نویسندگان

  • A. K. Bates
  • M. Rothschild
  • T. M. Bloomstein
  • T. H. Fedynyshyn
  • R. R. Kunz
  • V. Liberman
  • M. Switkes
چکیده

Introduction Lithography with 157-nm fluorine lasers is rapidly emerging as a viable technology for the post-193-nm era [1–3]. In fact, it may become the technology of choice for 100to 70-nm nodes. It is attractive for several reasons, the most important being that it is fundamentally an extension of optical lithography at the longer wavelengths of 248 and 193 nm. Therefore, it holds the promise that the tool-manufacturing and waferprocessing infrastructures can be adapted to it relatively easily, and that optical-resolution-enhancing techniques (phase-shifting masks, off-axis illumination, etc.) can be applied to it as well. Nevertheless, the transition to the 157-nm wavelength is by no means straightforward. It is expected to encounter difficulties comparable to those of earlier shifts in lithographic wavelength, from I-line to 248 nm, and from 248 nm to 193 nm. This paper summarizes the status of some of the critical issues facing 157-nm lithography. These include the availability of suitable optical materials and coatings, mask materials and pellicles, ambient control to minimize contamination of optical surfaces, as well as high-performance resists optimized for 157-nm applications.

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تاریخ انتشار 2001